文献
J-GLOBAL ID:201702274107599396
整理番号:17A0513663
強誘電性バナジウム添加ZnOにおける単極抵抗スイッチングの高抵抗状態保持に対する内部電場の影響
Effect of internal field on the high resistance state retention of unipolar resistance switching in ferroelectric vanadium doped ZnO
著者 (6件):
Wu Changjin
(Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 17035, South Korea)
,
Jia Yuefa
(Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 17035, South Korea)
,
Shin Yeong Jae
(Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, South Korea)
,
Noh Tae Won
(Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, South Korea)
,
Chae Seung Chul
(Department of Physics Education, Seoul National University, Seoul 08826, South Korea)
,
Liu Chunli
(Department of Physics and Oxide Research Center, Hankuk University of Foreign Studies, Yongin 17035, South Korea)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
14
ページ:
143502-143502-5
発行年:
2017年04月03日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)