文献
J-GLOBAL ID:201702274239304141
整理番号:17A0657871
太陽光及び自己出力型スーパーキャパシタ光検出器システムによる半導体ナノ構造ベースの電気二重層キャパシタの静電容量の増強【Powered by NICT】
Capacitance Enhancement in a Semiconductor Nanostructure-Based Supercapacitor by Solar Light and a Self-Powered Supercapacitor-Photodetector System
著者 (9件):
Zhu Minshen
(Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China)
,
Huang Yang
(Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China)
,
Huang Yan
(Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China)
,
Pei Zengxia
(Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China)
,
Xue Qi
(Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China)
,
Li Hongfei
(Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China)
,
Geng Huiyuan
(State Key Laboratory of Advance Welding and Joining, Harbin Institute of Technology, Harbin, 150001, China)
,
Zhi Chunyi
(Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Hong Kong, China)
,
Zhi Chunyi
(Shenzhen Research Institute, City University of Hong Kong, Shenzhen, 518000, China)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
26
号:
25
ページ:
4481-4490
発行年:
2016年07月05日
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)