文献
J-GLOBAL ID:201702274357472488
整理番号:17A0445456
純水素で発生した散漫コプレーナ表面障壁放電を用いた二酸化けい素の大気圧プラズマエッチング【Powered by NICT】
Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen
著者 (5件):
Krumpolec Richard
(R&D Centre for Low-Cost Plasma and Nanotechnology Surface Modifications (CEPLANT), Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 267/2, 611 37 Brno, Czech Republic)
,
Cech Jan
(R&D Centre for Low-Cost Plasma and Nanotechnology Surface Modifications (CEPLANT), Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 267/2, 611 37 Brno, Czech Republic)
,
Jurmanova Jana
(R&D Centre for Low-Cost Plasma and Nanotechnology Surface Modifications (CEPLANT), Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 267/2, 611 37 Brno, Czech Republic)
,
Durina Pavol
(Department of Experimental Physics, Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynska dolina, 842 48 Bratislava, Slovakia)
,
Cernak Mirko
(R&D Centre for Low-Cost Plasma and Nanotechnology Surface Modifications (CEPLANT), Department of Physical Electronics, Faculty of Science, Masaryk University, Kotlarska 267/2, 611 37 Brno, Czech Republic)
資料名:
Surface & Coatings Technology
(Surface & Coatings Technology)
巻:
309
ページ:
301-308
発行年:
2017年
JST資料番号:
D0205C
ISSN:
0257-8972
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)