文献
J-GLOBAL ID:201702274630348827
整理番号:17A0057890
高K/low K複合誘電体構造を持つ10kV垂直GaN PN接合ダイオード【Powered by NICT】
Over 10 kV vertical GaN p-n junction diodes with high-K/low-K compound dielectric structure
著者 (5件):
Du Jiangfeng
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No.4, Section 2, North Jianshe Road, Chengdu, Sichuan, P.R. China)
,
Li Zhenchao
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No.4, Section 2, North Jianshe Road, Chengdu, Sichuan, P.R. China)
,
Liu Dong
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No.4, Section 2, North Jianshe Road, Chengdu, Sichuan, P.R. China)
,
Bai Zhiyuan
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No.4, Section 2, North Jianshe Road, Chengdu, Sichuan, P.R. China)
,
Yu Qi
(State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, No.4, Section 2, North Jianshe Road, Chengdu, Sichuan, P.R. China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
58-61
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)