文献
J-GLOBAL ID:201702275031060270
整理番号:17A1262381
ナノスケールフォトトランジスタの感度限界【Powered by NICT】
Sensitivity Limit of Nanoscale Phototransistors
著者 (4件):
Rezaei Mohsen
(Department of Electrical Engineering and Computer Science, Bio-inspired Sensors and Optoelectronics Laboratory, Northwestern University, Evanston, IL, USA)
,
Park Min-Su
(Department of Electrical Engineering and Computer Science, Bio-inspired Sensors and Optoelectronics Laboratory, Northwestern University, Evanston, IL, USA)
,
Tan Chee Leong
(Department of Electrical Engineering and Computer Science, Bio-inspired Sensors and Optoelectronics Laboratory, Northwestern University, Evanston, IL, USA)
,
Mohseni Hooman
(Department of Electrical Engineering and Computer Science, Bio-inspired Sensors and Optoelectronics Laboratory, Northwestern University, Evanston, IL, USA)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
8
ページ:
1051-1054
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)