文献
J-GLOBAL ID:201702275273412343
整理番号:17A0046723
ニッケルゲルマニウム化中の炭素存在下でのドーパント偏析の促進によるNiGe/n-およびp-Ge固有接触抵抗率の低減
Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation
著者 (12件):
Duan Ningyuan
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Luo Jun
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Wang Guilei
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Liu Jinbiao
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Simoen Eddy
(imec, Leuven, Belgium)
,
Mao Shujuan
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Radamson Henry
(KTH Royal Institute of Technology, Kista, Sweden)
,
Wang Xiaolei
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Li Junfeng
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Wang Wenwu
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Zhao Chao
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
,
Ye Tianchun
(Chinese Academy of Sciences, Institute of Microelectronics, Beijing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
63
号:
11
ページ:
4546-4549
発行年:
2016年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)