文献
J-GLOBAL ID:201702275451600981
整理番号:17A0402905
光電子分光法と第一原理計算により調べたエピタキシャルGaAsBiのBi結晶部位における局所変化【Powered by NICT】
Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations
著者 (15件):
Laukkanen P.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
,
Punkkinen M.P.J.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
,
Lahti A.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
,
Puustinen J.
(Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere, Finland)
,
Tuominen M.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
,
Hilska J.
(Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere, Finland)
,
Maekelae J.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
,
Dahl J.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
,
Yasir M.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
,
Kuzmin M.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
,
Kuzmin M.
(Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021, Russian Federation, Russian Federation)
,
Osiecki J.R.
(The MAX IV laboratory, P. O. Box 118, Lund University, SE-221 00 Lund, Sweden)
,
Schulte K.
(The MAX IV laboratory, P. O. Box 118, Lund University, SE-221 00 Lund, Sweden)
,
Guina M.
(Optoelectronics Research Centre, Tampere University of Technology, FI-33101 Tampere, Finland)
,
Kokko K.
(Department of Physics and Astronomy, University of Turku, FI-20014 Turku, Finland)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
396
ページ:
688-694
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)