文献
J-GLOBAL ID:201702275475048981
整理番号:17A0204212
G(m.max)=1441mS/mmによるAs EMT100nmゲートin(0.52)Al(0.48)As/In(0.7)Ga(0.3)のf_T=260GHzおよびf(max)=607GHz【Powered by NICT】
f_T = 260 GHz and f_(max) = 607 GHz of 100-nm-gate In_(0.52)Al_(0.48)As/In_(0.7)Ga_(0.3)As HEMTs with G_(m.max) = 1441 mS/mm
著者 (7件):
Wang Qing
(University of Electronic Science and Technology of China)
,
Ding Peng
(Department of Microwave IC,Institute of Microelectronics, Chinese Academy of Sciences)
,
Su Yongbo
(Department of Microwave IC,Institute of Microelectronics, Chinese Academy of Sciences)
,
Ding Wuchang
(Department of Microwave IC,Institute of Microelectronics, Chinese Academy of Sciences)
,
Muhammad Asif
(Department of Microwave IC,Institute of Microelectronics, Chinese Academy of Sciences)
,
Tang Wu
(University of Electronic Science and Technology of China)
,
Jin Zhi
(Department of Microwave IC,Institute of Microelectronics, Chinese Academy of Sciences)
資料名:
Journal of Semiconductors
(Journal of Semiconductors)
巻:
37
号:
7
ページ:
074003-1-074003-7
発行年:
2016年
JST資料番号:
C2377A
ISSN:
1674-4926
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)