文献
J-GLOBAL ID:201702275514341703
整理番号:17A1093490
プラズマドーピングにより作製したほう素ドープSiナノワイヤの表面化学構造とドーピング特性【Powered by NICT】
Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping
著者 (13件):
Oh Seung-Hoon
(Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea)
,
Ma Jin-Won
(Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea)
,
Ma Jin-Won
(Process Development Team, Semiconductor R&D Center, SAMSUNG, Hwaseong-si 18448, Republic of Korea)
,
Bae Jung Min
(Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea)
,
Kang Yu-seon
(Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea)
,
Kang Yu-seon
(Process Development Team, Semiconductor R&D Center, SAMSUNG, Hwaseong-si 18448, Republic of Korea)
,
Ahn Jae-Pyung
(Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea)
,
Kang Hang-Kyu
(Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea)
,
Chae Jimin
(Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea)
,
Suh Dongchan
(Process Development Team, Semiconductor R&D Center, SAMSUNG, Hwaseong-si 18448, Republic of Korea)
,
Song Woobin
(Process Development Team, Semiconductor R&D Center, SAMSUNG, Hwaseong-si 18448, Republic of Korea)
,
Kim Sunjung
(Process Development Team, Semiconductor R&D Center, SAMSUNG, Hwaseong-si 18448, Republic of Korea)
,
Cho Mann-Ho
(Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
419
ページ:
1-8
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)