文献
J-GLOBAL ID:201702275692446943
整理番号:17A0214350
選択的レーザアニーリングによるソース/ドレインドーパント回復を用いたV_ov=V_ds=1V,SS=95mV/dec,高I_on/I_off=2×10~6と減少した雑音パワー密度での同時I_on=1235μA/μmの高性能Ge無接合ゲートオールアラウンドNFETs【Powered by NICT】
High performance Ge junctionless gate-all-around NFETs with simultaneous Ion =1235 μA/μm at Vov=Vds=1V, SS=95 mV/dec, high Ion/Ioff=2×106, and reduced noise power density using S/D dopant recovery by selective laser annealing
著者 (10件):
Wong I-Hsieh
(Graduate Institute of Electronic Engineering)
,
Lu Fang-Liang
(Graduate Institute of Electronic Engineering)
,
Huang Shih-Hsien
(Graduate Institute of Electronic Engineering)
,
Ye Hung-Yu
(Graduate Institute of Electronic Engineering)
,
Lu Chun-Ti
(Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan)
,
Yan Jhih-Yang
(Graduate Institute of Electronic Engineering)
,
Shen Yu-Cheng
(Graduate Institute of Electronic Engineering)
,
Peng Yu-Jiun
(Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan)
,
Lan Huang-Siang
(Graduate Institute of Electronic Engineering)
,
Liu C. W.
(Graduate Institute of Electronic Engineering)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
33.6.1-33.6.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)