文献
J-GLOBAL ID:201702275794412170
整理番号:17A0657876
ナノロッド先端での非局在化電子蓄積:効率的なH_2発生の起源【Powered by NICT】
Delocalized Electron Accumulation at Nanorod Tips: Origin of Efficient H2 Generation
著者 (9件):
Zhang Kan
(Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea)
,
Kim Jung Kyu
(Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea)
,
Kim Jung Kyu
(Department of Mechanical Engineering, Stanford University, CA, 94305, USA)
,
Ma Ming
(Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea)
,
Ma Ming
(SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea)
,
Yim Sang Youp
(Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 500-712, South Korea)
,
Lee Chang-Lyoul
(Advanced Photonics Research Institute (APRI), Gwangju Institute of Science and Technology (GIST), Gwangju, 500-712, South Korea)
,
Shin Hyunjung
(Department of Energy Science, Sungkyunkwan University, Suwon, 440-746, South Korea)
,
Park Jong Hyeok
(Department of Chemical and Biomolecular Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, South Korea)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
26
号:
25
ページ:
4527-4534
発行年:
2016年07月05日
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)