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J-GLOBAL ID:201702275848770341
整理番号:17A0475057
レーザ熱アニーリングによる半導体デバイスのドーピング【Powered by NICT】
Doping of semiconductor devices by Laser Thermal Annealing
著者 (5件):
Huet Karim
(Laser Systems and Solutions of Europe (LASSE), SCREEN Semiconductor Solutions Co., Ltd., 14-38 rue Alexandre, Bldg D, 92230 Gennevilliers, France)
,
Mazzamuto Fulvio
(Laser Systems and Solutions of Europe (LASSE), SCREEN Semiconductor Solutions Co., Ltd., 14-38 rue Alexandre, Bldg D, 92230 Gennevilliers, France)
,
Tabata Toshiyuki
(Laser Systems and Solutions of Europe (LASSE), SCREEN Semiconductor Solutions Co., Ltd., 14-38 rue Alexandre, Bldg D, 92230 Gennevilliers, France)
,
Toque-Tresonne Ines
(Laser Systems and Solutions of Europe (LASSE), SCREEN Semiconductor Solutions Co., Ltd., 14-38 rue Alexandre, Bldg D, 92230 Gennevilliers, France)
,
Mori Yoshihiro
(SCREEN Semiconductor Solutions Co., Ltd., 480-1 Takamiya-cho, Hikone, Shiga 522-0292, Japan)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
62
ページ:
92-102
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)