文献
J-GLOBAL ID:201702275915200641
整理番号:17A0989688
溶液法で作製した遷移金属ジカルコゲニドを用いたフレキシブル不揮発性トランジスタメモリ【Powered by NICT】
Flexible Nonvolatile Transistor Memory with Solution-Processed Transition Metal Dichalcogenides
著者 (6件):
Kim Richard Hahnkee
(Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea)
,
Lee Jinseong
(Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea)
,
Kim Kang Lib
(Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea)
,
Cho Suk Man
(Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea)
,
Kim Dong Ha
(Department of Chemistry and Nano Science, Division of Molecular and Life Sciences, College of Natural Sciences, Ewha Womans University, 52, Ewhayeodae-gil, Seodaemun-gu, Seoul, 03760, Republic of Korea)
,
Park Cheolmin
(Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 120-749, Republic of Korea)
資料名:
Small
(Small)
巻:
13
号:
20
ページ:
ROMBUNNO.201603971
発行年:
2017年
JST資料番号:
W2348A
ISSN:
1613-6810
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)