文献
J-GLOBAL ID:201702276377588574
整理番号:17A0407191
より長い波長発光のための新しいII型InGaAs/GaAsBi量子井戸【Powered by NICT】
Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission
著者 (16件):
Yue Li
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Song Yuxin
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Chen Xiren
(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China)
,
Chen Xiren
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Chen Qimiao
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Chen Qimiao
(University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China)
,
Pan Wenwu
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Pan Wenwu
(University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China)
,
Wu Xiaoyan
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Wu Xiaoyan
(University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China)
,
Liu Juanjuan
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Liu Juanjuan
(University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100190, China)
,
Zhang Liyao
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Shao Jun
(National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China)
,
Wang Shumin
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China)
,
Wang Shumin
(Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 41296, Sweden)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
695
ページ:
753-759
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)