文献
J-GLOBAL ID:201702276478171108
整理番号:17A0055474
n-InP上に成長させたInGaAs/AlInAsヘテロ構造のDLTFS研究S基質【Powered by NICT】
DLTFS study of InGaAs/AlInAs heterostructures grown on n-InP:S substrates
著者 (8件):
Kosa A.
(Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia)
,
Stuchlikova L.
(Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia)
,
Harmatha L.
(Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia)
,
Kovac J.
(Institute of Electronics and Photonics, Slovak University of Technology in Bratislava, Ilkovic∨ova 3, 812 19 Bratislava, Slovakia)
,
Badura M.
(Wrocl/aw University of Science and Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372, Wrocl/aw, Poland)
,
Bielak K.
(Wrocl/aw University of Science and Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372, Wrocl/aw, Poland)
,
Sciana B.
(Wrocl/aw University of Science and Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372, Wrocl/aw, Poland)
,
Tlaczala M.
(Wrocl/aw University of Science and Technology, Faculty of Microsystem Electronics and Photonics, Janiszewskiego 11/17, 50-372, Wrocl/aw, Poland)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
ASDAM
ページ:
149-152
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)