文献
J-GLOBAL ID:201702277214913750
整理番号:17A0318678
純粋および遷移元素(TM)をドープした(TM=Ti,Y,ZrまたはHf)L1_2Al_3Sc中の空格子点欠陥を介する原子拡散【Powered by NICT】
Atomic diffusion mediated by vacancy defects in pure and transition element (TM)-doped (TM=Ti, Y, Zr or Hf) L12 Al3Sc
著者 (5件):
Shi Tao-Tao
(School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China)
,
Wang Jia-Ning
(School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China)
,
Wang Ya-Ping
(School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China)
,
Wang Hai-Chen
(School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China)
,
Tang Bi-Yu
(School of Chemistry and Chemical Engineering, Guangxi University, Nanning 530004, China)
資料名:
Materials & Design
(Materials & Design)
巻:
108
ページ:
529-537
発行年:
2016年
JST資料番号:
A0495B
ISSN:
0264-1275
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)