文献
J-GLOBAL ID:201702277304370701
整理番号:17A0400534
バルクFinFETにおけるホットキャリア注入ストレス誘起劣化に及ぼすフィン数の影響【Powered by NICT】
Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs
著者 (11件):
Zhang Wenqi
(Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC)
,
Wang Tzuo-Li
(Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan, ROC)
,
Huang Yan-Hua
(Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan, ROC)
,
Cheng Tsu-Ting
(Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC)
,
Chen Shih-Yao
(Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC)
,
Li Yi-Ying
(Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan, ROC)
,
Hsu Chun-Hsiang
(Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan, ROC)
,
Lai Chih-Jui
(Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan, ROC)
,
Yeh Wen-Kuan
(Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan, ROC)
,
Yeh Wen-Kuan
(National Nano Device Laboratories (NDL), National Applied Research Laboratories, Hsinchu 300, Taiwan, ROC)
,
Yang Yi-Lin
(Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 824, Taiwan, ROC)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
67
ページ:
89-93
発行年:
2016年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)