文献
J-GLOBAL ID:201702277393014296
整理番号:17A1170533
パターン抵抗/導電性SiCテンプレート上のAlGaNH EMT【Powered by NICT】
AlGaN HEMTs on patterned resistive/conductive SiC templates
著者 (10件):
Prystawko Pawel
(Institute of High Pressure Physics, Polish Academy of Sciences, Unipress, ul. Sokolowska 29/37, 01-142 Warsaw, Poland)
,
Prystawko Pawel
(TopGaN Ltd, Sokolowska 29/37, 01-142 Warsaw, Poland)
,
Sarzynski Marcin
(Institute of High Pressure Physics, Polish Academy of Sciences, Unipress, ul. Sokolowska 29/37, 01-142 Warsaw, Poland)
,
Sarzynski Marcin
(TopGaN Ltd, Sokolowska 29/37, 01-142 Warsaw, Poland)
,
Nowakowska-Siwinska Anna
(TopGaN Ltd, Sokolowska 29/37, 01-142 Warsaw, Poland)
,
Crippa Danilo
(LPE, Via Falzarego, 8-20021 Baranzate, MI, Italy)
,
Kruszewski Piotr
(Institute of High Pressure Physics, Polish Academy of Sciences, Unipress, ul. Sokolowska 29/37, 01-142 Warsaw, Poland)
,
Wojtasiak Wojciech
(Institute of Radioelectronics, Technical University, Warsaw, 00-665 ul. Nowowiejska 15/19, Poland)
,
Leszczynski Mike
(Institute of High Pressure Physics, Polish Academy of Sciences, Unipress, ul. Sokolowska 29/37, 01-142 Warsaw, Poland)
,
Leszczynski Mike
(TopGaN Ltd, Sokolowska 29/37, 01-142 Warsaw, Poland)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
464
ページ:
159-163
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)