文献
J-GLOBAL ID:201702277649650702
整理番号:17A0124328
kMC TDDBシミュレーションを持つ超薄EOT高k金属ゲートNMOSFETの時間依存絶縁破壊特性に及ぼすTiNキャッピング層の影響に関する研究【Powered by NICT】
Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high--k metal gate NMOSFET with kMC TDDB simulations
著者 (14件):
Xu Hao
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Yang Hong
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Luo Weichun
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Xu Yefeng
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Wang Yanrong
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Tang Bo
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Wang Wenwu
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Qi Luwei
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Li Junfeng
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Yan Jiang
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Zhu Huilong
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Zhao Chao
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Chen Dapeng
(Institute of MicroElectronics, Chinese Academy of Sciences)
,
Ye Tianchun
(Institute of MicroElectronics, Chinese Academy of Sciences)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
8
ページ:
087305-1-087305-05
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)