文献
J-GLOBAL ID:201702277822074631
整理番号:17A0385717
Al組成の高い半極性(11-22)AlxGa1-xNの光学的研究
Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition
著者 (9件):
Li Z.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Wang L.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Jiu L.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Bruckbauer J.
(Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom)
,
Gong Y.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Zhang Y.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Bai J.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Martin R. W.
(Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom)
,
Wang T.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
9
ページ:
091102-091102-5
発行年:
2017年02月27日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)