文献
J-GLOBAL ID:201702277902260224
整理番号:17A0302118
酸素プラズマ処理を用いた埋込みゲート準エンハンスメントモードAlGaN/GaN高電子移動度トランジスタ【Powered by NICT】
Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment
著者 (11件):
He Yunlong
(School of Microelectronics, Xidian University)
,
Wang Chong
(School of Microelectronics, Xidian University)
,
Mi Minhan
(School of Microelectronics, Xidian University)
,
Zheng Xuefeng
(School of Microelectronics, Xidian University)
,
Zhang Meng
(School of Advanced Materials and Nanotechnology, Xidian University)
,
Zhao Mengdi
(School of Microelectronics, Xidian University)
,
Zhang Hengshuang
(School of Microelectronics, Xidian University)
,
Chen Lixiang
(School of Advanced Materials and Nanotechnology, Xidian University)
,
Zhang Jincheng
(School of Microelectronics, Xidian University)
,
Ma Xiaohua
(School of Microelectronics, Xidian University)
,
Hao Yue
(School of Microelectronics, Xidian University)
資料名:
Chinese Physics B
(Chinese Physics B)
巻:
25
号:
11
ページ:
117305_01-117305_06
発行年:
2016年
JST資料番号:
W1539A
ISSN:
1674-1056
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)