文献
J-GLOBAL ID:201702278139663181
整理番号:17A0759436
スズビスマス酸化物薄膜トランジスタにおける不斉接触【Powered by NICT】
Asymmetric contact in tin bismuth oxide thin film transistors
著者 (5件):
Yang Jianwen
(Department of Materials Science, National Engineering Lab of TFT-LCD Materials and Technologies, Fudan University, 200433 Shanghai, P. R. China)
,
Han Yanbing
(Department of Materials Science, National Engineering Lab of TFT-LCD Materials and Technologies, Fudan University, 200433 Shanghai, P. R. China)
,
Fu Ruofan
(Department of Materials Science, National Engineering Lab of TFT-LCD Materials and Technologies, Fudan University, 200433 Shanghai, P. R. China)
,
Ren Jinhua
(Department of Materials Science, National Engineering Lab of TFT-LCD Materials and Technologies, Fudan University, 200433 Shanghai, P. R. China)
,
Zhang Qun
(Department of Materials Science, National Engineering Lab of TFT-LCD Materials and Technologies, Fudan University, 200433 Shanghai, P. R. China)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
3
ページ:
ROMBUNNO.201600589
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)