文献
J-GLOBAL ID:201702279106419916
整理番号:17A1170242
光応答増強のためのグラフェン上の垂直積層横方向ヘテロ構造2H/1t’-MoS_2による三相2次元材料【Powered by NICT】
Triphasic 2D Materials by Vertically Stacking Laterally Heterostructured 2H-/1T′-MoS2 on Graphene for Enhanced Photoresponse
著者 (11件):
Cui Weili
(College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China)
,
Xu Shanshan
(College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China)
,
Yan Bo
(College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China)
,
Guo Zhihua
(College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China)
,
Xu Qun
(College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China)
,
Sumpter Bobby G.
(Center for Nanophase Materials Sciences and Computational Sciences and Engineering Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA)
,
Huang Jingsong
(Center for Nanophase Materials Sciences and Computational Sciences and Engineering Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA)
,
Yin Shiwei
(Key Laboratory for Macromolecular Science of Shaanxi Province, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an City, 710062, P. R. China)
,
Zhao Huijun
(Centre for Clean Environment and Energy, Griffith School of Environment, Griffith University, Gold Coast Campus, QLD, 4222, Australia)
,
Zhao Huijun
(Centre for Environmental and Energy Nanomaterials, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, P. R. China)
,
Wang Yun
(Centre for Clean Environment and Energy, Griffith School of Environment, Griffith University, Gold Coast Campus, QLD, 4222, Australia)
資料名:
Advanced Electronic Materials
(Advanced Electronic Materials)
巻:
3
号:
7
ページ:
ROMBUNNO.201700024
発行年:
2017年
JST資料番号:
W2482A
ISSN:
2199-160X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)