文献
J-GLOBAL ID:201702279273858903
整理番号:17A1721736
不連続抵抗SnO2バッファ層を持つ高品質CdS/CdTe P-N接合ダイオード【Powered by NICT】
High Quality CdS/CdTe P-N Junction Diode With a Noncontinuous Resistive SnO2 Buffer Layer
著者 (6件):
Shen Kai
(Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China)
,
Wang Ziwen
(Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China)
,
Li Qiang
(Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China)
,
Li Xun
(Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China)
,
Zhang Zhenyu
(Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China)
,
Wang Deliang
(Hefei National Laboratory for Physical Sciences at the Microscale and the CAS Key Laboratory of Energy Conversion Materials, University of Science and Technology of China, Hefei, China)
資料名:
IEEE Journal of Photovoltaics
(IEEE Journal of Photovoltaics)
巻:
7
号:
6
ページ:
1761-1766
発行年:
2017年
JST資料番号:
W2305A
ISSN:
2156-3381
CODEN:
IJPEG8
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)