文献
J-GLOBAL ID:201702279815111665
整理番号:17A0398805
密度汎関数理論を用いた窒化ホウ素ナノチューブの導電特性に及ぼすドープしたAl原子の配置の影響の研究【Powered by NICT】
Studying the effects of the configuration of doped Al atoms on the conductive properties of boron nitride nanotube using density functional theory
著者 (5件):
Tavangar Zahra
(Department of Physical Chemistry, Faculty of Chemistry, University of Kashan, Iran)
,
Tavangar Zahra
(Institute of Nano Science and Nano Technology, University of Kashan, Kashan, Iran)
,
Hamadanian Masood
(Department of Physical Chemistry, Faculty of Chemistry, University of Kashan, Iran)
,
Hamadanian Masood
(Institute of Nano Science and Nano Technology, University of Kashan, Kashan, Iran)
,
Basharnavaz Hadi
(Department of Physical Chemistry, Faculty of Chemistry, University of Kashan, Iran)
資料名:
Chemical Physics Letters
(Chemical Physics Letters)
巻:
669
ページ:
29-37
発行年:
2017年
JST資料番号:
B0824A
ISSN:
0009-2614
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)