文献
J-GLOBAL ID:201702279974344202
整理番号:17A0881983
インプリントされたAgグリッドと修正バッファ層により可能になった高効率の大面積フレキシブル高分子太陽電池【Powered by NICT】
Large area flexible polymer solar cells with high efficiency enabled by imprinted Ag grid and modified buffer layer
著者 (11件):
Lu Shudi
(Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Lu Shudi
(Department of Physics, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China)
,
Lin Jie
(Center of Ultra-Precision Optoelectronic Instrument, Harbin Institute of Technology, Harbin 150080, China)
,
Liu Kong
(Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Yue Shizhong
(Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Ren Kuankuan
(Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Tan Furui
(Key Laboratory of Photovoltaic Materials, Department of Physics and Electronics, Henan University, Kaifeng 475004, China)
,
Wang Zhijie
(Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Jin Peng
(Center of Ultra-Precision Optoelectronic Instrument, Harbin Institute of Technology, Harbin 150080, China)
,
Qu Shengchun
(Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
,
Wang Zhanguo
(Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
資料名:
Acta Materialia
(Acta Materialia)
巻:
130
ページ:
208-214
発行年:
2017年
JST資料番号:
A0316A
ISSN:
1359-6454
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)