文献
J-GLOBAL ID:201702279982447336
整理番号:17A0057826
Si基板上のIII-Vに対する絶縁体トランジスタのための高速エピタキシャルリフトオフ【Powered by NICT】
High-speed epitaxial lift-off for III-V-on-insulator transistors on Si substrates
著者 (6件):
Kim SangHyeon
(Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Korea)
,
Geum Dae-Myeong
(Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Korea)
,
Kim Seong Kwang
(Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Korea)
,
Kim Hyung-jun
(Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Korea)
,
Song Jin Dong
(Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Korea)
,
Choi Won Jun
(Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology (KIST), Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
S3S
ページ:
1-2
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)