文献
J-GLOBAL ID:201702280140140855
整理番号:17A0699530
吸収層の最適化されたZn/Sn原子比での燐化法により調製したZnSnP_2薄膜太陽電池【Powered by NICT】
ZnSnP2 thin-film solar cell prepared by phosphidation method under optimized Zn/Sn atomic ratio of its absorbing layer
著者 (5件):
Yuzawa Noriyuki
(Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan)
,
Chantana Jakapan
(Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan)
,
Nakatsuka Shigeru
(Department of Materials Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan)
,
Nose Yoshitaro
(Department of Materials Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan)
,
Minemoto Takashi
(Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan)
資料名:
Current Applied Physics
(Current Applied Physics)
巻:
17
号:
4
ページ:
557-564
発行年:
2017年
JST資料番号:
W1579A
ISSN:
1567-1739
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)