文献
J-GLOBAL ID:201702280174274835
整理番号:17A0027150
HfO2/In0.53Ga0.47As金属-酸化物-半導体電界効果トランジスタの性能に及ぼすその場プラズマ強化型原子層堆積処理の影響
Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
著者 (10件):
Luc Quang Ho
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Cheng Shou Po
(Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Chang Po Chun
(Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Do Huy Binh
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Chen Jin Han
(Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Ha Minh Thien Huu
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Huynh Sa Hoang
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Hu Chenming Calvin
(Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA)
,
Lin Yueh Chin
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Chang Edward Yi
(Department of Materials Science and Engineering and the Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
37
号:
8
ページ:
974-977
発行年:
2016年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)