文献
J-GLOBAL ID:201702280302132539
整理番号:17A0759418
InP基板上に成長させたInGaAsN/GaAsSb第二種量子井戸ダイオードの特性に及ぼすアニーリングの効果【Powered by NICT】
Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates
著者 (6件):
Kawamura Y.
(Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8570, Japan)
,
Kawamura Y.
(Research Organization for University-Community Collaboration, Osaka Prefecture University, Sakai 599-8570, Japan)
,
Shishido I.
(Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8570, Japan)
,
Tanaka S.
(Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8570, Japan)
,
Kawamata S.
(Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8570, Japan)
,
Kawamata S.
(Research Organization for University-Community Collaboration, Osaka Prefecture University, Sakai 599-8570, Japan)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
3
ページ:
ROMBUNNO.201600510
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)