文献
J-GLOBAL ID:201702280581880874
整理番号:17A0407299
電気的性質の調節とA LD derived Al_2O_3不動態化層によるHfAlO/Geゲートスタックの電流伝導機構【Powered by NICT】
Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer
著者 (8件):
He G.
(School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, China)
,
Li W.D.
(School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, China)
,
Wei H.H.
(School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, China)
,
Jiang S.S.
(School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, China)
,
Xiao X.D.
(School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, China)
,
Jin P.
(School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, China)
,
Gao J.
(School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230039, China)
,
Gao J.
(School of Sciences, Anhui University of Science and Technology, Huainan 232001, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
695
ページ:
1591-1599
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)