文献
J-GLOBAL ID:201702280775719860
整理番号:17A0469841
低エネルギー(120 eV)ヘリウムの電流マッピングと導電性原子間力顕微鏡による水素照射されたタングステン【Powered by NICT】
Current mapping of low-energy (120 eV) helium and hydrogen irradiated tungsten by conductive atomic force microscopy
著者 (8件):
Fan Hongyu
(School of Physics and Materials Engineering, Dalian Nationalities University, Dalian, People’s Republic of China)
,
Endo Takashi
(Nano-micro Materials Analysis Laboratory, Hokkaido University, Sapporo, Japan)
,
Bi Zhenghua
(School of Physics and Materials Engineering, Dalian Nationalities University, Dalian, People’s Republic of China)
,
Yan Weibin
(School of Physics and Materials Engineering, Dalian Nationalities University, Dalian, People’s Republic of China)
,
Ohnuki Somei
(Nano-micro Materials Analysis Laboratory, Hokkaido University, Sapporo, Japan)
,
Yang Qi
(School of Physics and Materials Engineering, Dalian Nationalities University, Dalian, People’s Republic of China)
,
Ni Weiyuan
(School of Physics and Materials Engineering, Dalian Nationalities University, Dalian, People’s Republic of China)
,
Liu Dongping
(School of Physics and Materials Engineering, Dalian Nationalities University, Dalian, People’s Republic of China)
資料名:
Journal of Nuclear Materials
(Journal of Nuclear Materials)
巻:
486
ページ:
191-196
発行年:
2017年
JST資料番号:
D0148A
ISSN:
0022-3115
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)