文献
J-GLOBAL ID:201702281118832247
整理番号:17A0408067
3次元Nドープ,プラズマエッチングしたグラフェン:水素発生反応のための活性金属を含まない触媒を高度に予測する【Powered by NICT】
Three-dimensional N-doped, plasma-etched graphene: Highly active metal-free catalyst for hydrogen evolution reaction
著者 (7件):
Tian Ye
(College of Science, Hebei North University, Zhangjiakou 075000, Hebei, China)
,
Ye Yongfei
(College of Information Science and Engineering, Hebei North University, Zhangjiakou 075000, Hebei, China)
,
Wang Xuejun
(College of Science, Hebei North University, Zhangjiakou 075000, Hebei, China)
,
Peng Shuo
(College of Information Science and Engineering, Hebei North University, Zhangjiakou 075000, Hebei, China)
,
Wei Zhen
(College of Information Science and Engineering, Hebei North University, Zhangjiakou 075000, Hebei, China)
,
Zhang Xiao
(College of Information Science and Engineering, Hebei North University, Zhangjiakou 075000, Hebei, China)
,
Liu Wuming
(Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China)
資料名:
Applied Catalysis. A: General
(Applied Catalysis. A: General)
巻:
529
ページ:
127-133
発行年:
2017年
JST資料番号:
D0691C
ISSN:
0926-860X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)