文献
J-GLOBAL ID:201702281694942128
整理番号:17A0513666
界面電荷に対して補正した解析モデルにより確かめられた高パルス電流密度β-Ga2O3 MOSFET
High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge
著者 (9件):
Moser Neil A.
(Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030, USA)
,
McCandless Jonathan P.
(KBRWyle, 4200 Colonel Glenn Hwy, Beavercreek, Ohio 45431, USA)
,
Crespo Antonio
(Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USA)
,
Leedy Kevin D.
(Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USA)
,
Green Andrew J.
(KBRWyle, 4200 Colonel Glenn Hwy, Beavercreek, Ohio 45431, USA)
,
Heller Eric R.
(Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433, USA)
,
Chabak Kelson D.
(Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USA)
,
Peixoto Nathalia
(Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030, USA)
,
Jessen Gregg H.
(Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
14
ページ:
143505-143505-5
発行年:
2017年04月03日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)