文献
J-GLOBAL ID:201702281786782592
整理番号:17A0375047
高効率薄膜太陽電池用の傾斜バンドギャップとμc-Si:Hバッファ層を持つシリコンゲルマニウム活性層【Powered by NICT】
Silicon germanium active layer with graded band gap and μc-Si:H buffer layer for high efficiency thin film solar cells
著者 (9件):
Pham Duy Phong
(College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
,
Kim Sangho
(Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
,
Park Jinjoo
(College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
,
Le AnhHuy Tuan
(College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
,
Cho Jaehyun
(Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
,
Jung Junhee
(Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
,
Iftiquar S.M.
(College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
,
Yi Junsin
(College of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
,
Yi Junsin
(Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
56
ページ:
183-188
発行年:
2016年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)