文献
J-GLOBAL ID:201702282191604453
整理番号:17A0769567
高歪補償InGaAs/InAlAs超格子の構造と光ルミネセンス特性【Powered by NICT】
Structural and Photoluminescence Properties for Highly Strain-Compensated InGaAs/InAlAs Superlattice
著者 (6件):
GU Yi
(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences)
,
ZHANG Yong-Gang
(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences)
,
LI Ai-Zhen
(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences)
,
WANG Kai
(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences)
,
LI Cheng
(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences)
,
LI Yao-Yao
(Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
26
号:
7
ページ:
335-338
発行年:
2009年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)