文献
J-GLOBAL ID:201702282328238223
整理番号:17A0222680
バルク超伝導体のフラックス・ジャンプ支援パルス場磁化によって発生した>3Tのポータブル磁場
A portable magnetic field of >3 T generated by the flux jump assisted, pulsed field magnetization of bulk superconductors
著者 (8件):
Zhou Difan
(Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, United Kingdom)
,
Ainslie Mark D.
(Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, United Kingdom)
,
Shi Yunhua
(Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, United Kingdom)
,
Dennis Anthony R.
(Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, United Kingdom)
,
Huang Kaiyuan
(Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, United Kingdom)
,
Hull John R.
(The Boeing Company, Seattle, Washington 98124-2207, USA)
,
Cardwell David A.
(Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, United Kingdom)
,
Durrell John H.
(Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, United Kingdom)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
6
ページ:
062601-062601-4
発行年:
2017年02月06日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)