文献
J-GLOBAL ID:201702283392189389
整理番号:17A0151797
HfO2に基づく1T-1R抵抗ランダムアクセスメモリ素子の伝導機構とスイッチングパラメータに及ぼす温度の影響
Impact of temperature on conduction mechanisms and switching parameters in HfO2-based 1T-1R resistive random access memories devices
著者 (6件):
Perez Eduardo
(IHP GmbH/Leibniz-Institut fuer Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany)
,
Wenger Christian
(IHP GmbH/Leibniz-Institut fuer Innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany)
,
Grossi Alessandro
(Dip. di Ingegneria, Universita degli Studi di Ferrara, Via G. Saragat 1, 44122 Ferrara, Italy)
,
Zambelli Cristian
(Dip. di Ingegneria, Universita degli Studi di Ferrara, Via G. Saragat 1, 44122 Ferrara, Italy)
,
Olivo Piero
(Dip. di Ingegneria, Universita degli Studi di Ferrara, Via G. Saragat 1, 44122 Ferrara, Italy)
,
Roelofs Robin
(ASM, Kapeldreef 75, 3001 Leuven, Belgium)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
1
ページ:
01A103-01A103-5
発行年:
2017年01月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)