文献
J-GLOBAL ID:201702283418707750
整理番号:17A0328675
低エネルギー運転のためのパワーゲート9T SRAMセル【Powered by NICT】
Power-Gated 9T SRAM Cell for Low-Energy Operation
著者 (6件):
Oh Tae Woo
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea)
,
Jeong Hanwool
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea)
,
Kang Kyoman
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea)
,
Park Juhyun
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea)
,
Yang Younghwi
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea)
,
Jung Seong-Ook
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea)
資料名:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
(IEEE Transactions on Very Large Scale Integration (VLSI) Systems)
巻:
25
号:
3
ページ:
1183-1187
発行年:
2017年
JST資料番号:
W0516A
ISSN:
1063-8210
CODEN:
ITCOB4
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)