文献
J-GLOBAL ID:201702283494566395
整理番号:17A0313946
エピンドリジオン有機薄膜トランジスタに及ぼすその場研究における依存性温度と層厚【Powered by NICT】
Temperature and layer thickness dependent in situ investigations on epindolidione organic thin-film transistors
著者 (8件):
Lassnig R.
(Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria)
,
Striedinger B.
(Materials-Institute for Surface Technologies and Photonics, Joanneum Research Forschungsgesellschaft mbH, Franz-Pichler-Strasse 30, A-8160 Weiz, Austria)
,
Jones A.O.F.
(Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria)
,
Scherwitzl B.
(Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria)
,
Fian A.
(Materials-Institute for Surface Technologies and Photonics, Joanneum Research Forschungsgesellschaft mbH, Franz-Pichler-Strasse 30, A-8160 Weiz, Austria)
,
Glowacki E.D.
(Linz Institute for Organic Solar Cells (LIOS), Johannes Kepler University, Altenbergerstrasse 69, A-4040 Linz, Austria)
,
Stadlober B.
(Materials-Institute for Surface Technologies and Photonics, Joanneum Research Forschungsgesellschaft mbH, Franz-Pichler-Strasse 30, A-8160 Weiz, Austria)
,
Winkler A.
(Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria)
資料名:
Synthetic Metals
(Synthetic Metals)
巻:
218
ページ:
64-74
発行年:
2016年08月
JST資料番号:
C0123B
ISSN:
0379-6779
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)