文献
J-GLOBAL ID:201702283852151725
整理番号:17A0214219
InGaAs MOSFETの性能とその応用InGaAs負性容量FETへのLa_2O_3/InGaAs MOS界面の影響【Powered by NICT】
Impact of La2O3/InGaAs MOS interface on InGaAs MOSFET performance and its application to InGaAs negative capacitance FET
著者 (6件):
Chang C.-Y.
(Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
,
Endo K.
(Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
,
Kato K.
(Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
,
Yokoyama C.
(Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
,
Takenaka M.
(Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
,
Takagi S.
(Department of Electrical Engineering and Information Systems, The University of Tokyo, Tokyo, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
12.5.1-12.5.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)