文献
J-GLOBAL ID:201702284040720799
整理番号:17A1567860
0.13μm(Bi)CMOS技術における改善された帯域内平坦性と阻止帯域減衰を用いた小型オンチップ帯域通過フィルタ【Powered by NICT】
Compact On-Chip Bandpass Filter With Improved In-Band Flatness and Stopband Attenuation in 0.13- $¥mu ¥text{m}$ (Bi)-CMOS Technology
著者 (6件):
Yang Yang
(School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia)
,
Liu Hang
(School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore)
,
Hou Zhang Ju
(Department of Electronic Engineering, State Key Laboratory of Millimeter Waves, City University of Hong Kong, Hong Kong)
,
Zhu Xi
(School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia)
,
Dutkiewicz Eryk
(School of Electrical and Data Engineering, University of Technology Sydney, Ultimo, NSW, Australia)
,
Xue Quan
(Department of Electronic Engineering, State Key Laboratory of Millimeter Waves, City University of Hong Kong, Hong Kong)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
10
ページ:
1359-1362
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)