文献
J-GLOBAL ID:201702284442557296
整理番号:17A0407666
溶液処理AlZnSnO半導体膜とインジウムボール電極を用いて作製した抵抗ランダムアクセスメモリ【Powered by NICT】
Resistive random access memories fabricated by using solution-processed AlZnSnO semiconductor films and indium ball electrodes
著者 (5件):
Hsu Chih-Chieh
(Graduate School of Engineering Science and Technology, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan, ROC)
,
Hsu Chih-Chieh
(Department of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan, ROC)
,
Hsu Chih-Chieh
(Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan, ROC)
,
Chen Yu-Ting
(Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan, ROC)
,
Tsao Che-Chang
(Graduate School of Electronic Engineering, National Yunlin University of Science and Technology, Douliu, 64002, Taiwan, ROC)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
696
ページ:
697-700
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)