文献
J-GLOBAL ID:201702284883170164
整理番号:17A1273410
HCl SOA強化のための遮蔽接触構造をもつ新しい高電圧LDMOS【Powered by NICT】
A novel high-voltage LDMOS with shielding-contact structure for HCl SOA enhancement
著者 (7件):
Liu Hsin-Liang
(Specialty Technology, United Microelectronics Corporation, Hsinchu, Taiwan)
,
Jhou Ze-Wei
(Specialty Technology, United Microelectronics Corporation, Hsinchu, Taiwan)
,
Huang Shih-Teng
(Specialty Technology, United Microelectronics Corporation, Hsinchu, Taiwan)
,
Lin Shu-Wen
(Specialty Technology, United Microelectronics Corporation, Hsinchu, Taiwan)
,
Lin Ke-Feng
(Specialty Technology, United Microelectronics Corporation, Hsinchu, Taiwan)
,
Lee Chiu-Te
(Specialty Technology, United Microelectronics Corporation, Hsinchu, Taiwan)
,
Wang Chih-Chong
(Specialty Technology, United Microelectronics Corporation, Hsinchu, Taiwan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ISPSD
ページ:
311-314
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)