文献
J-GLOBAL ID:201702285169859405
整理番号:17A0214325
電流,120mV動作のためのトンネルFETの設計【Powered by NICT】
A tunnel FET design for high-current, 120 mV operation
著者 (9件):
Long P.
(Network for computational nanotechnology, Purdue University, West Lafayette, IN 47906)
,
Huang J. Z.
(Network for computational nanotechnology, Purdue University, West Lafayette, IN 47906)
,
Povolotskyi M.
(Network for computational nanotechnology, Purdue University, West Lafayette, IN 47906)
,
Verreck D.
(Network for computational nanotechnology, Purdue University, West Lafayette, IN 47906)
,
Charles J.
(Network for computational nanotechnology, Purdue University, West Lafayette, IN 47906)
,
Kubis T.
(Network for computational nanotechnology, Purdue University, West Lafayette, IN 47906)
,
Klimeck G.
(Network for computational nanotechnology, Purdue University, West Lafayette, IN 47906)
,
Rodwell M. J.W.
(ECE Department, University of California, Santa Barbara, CA 93106-95603)
,
Calhoun B. H.
(ECE Department, University of Virginia, Charlottesville, VA 22904-4743)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
30.2.1-30.2.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)