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J-GLOBAL ID:201702285526248120
整理番号:17A0759455
高パワーと高局波エレクトロニクスのための窒化物半導体とグラフェン統合【Powered by NICT】
Graphene integration with nitride semiconductors for high power and high frequency electronics
著者 (11件):
Giannazzo F.
(CNR-IMM, Strada VIII, 5, Zona Industriale, 95121 Catania, Italy)
,
Fisichella G.
(CNR-IMM, Strada VIII, 5, Zona Industriale, 95121 Catania, Italy)
,
Greco G.
(CNR-IMM, Strada VIII, 5, Zona Industriale, 95121 Catania, Italy)
,
La Magna A.
(CNR-IMM, Strada VIII, 5, Zona Industriale, 95121 Catania, Italy)
,
Roccaforte F.
(CNR-IMM, Strada VIII, 5, Zona Industriale, 95121 Catania, Italy)
,
Pecz B.
(Institute for Technical Physics and Materials Science Research, Centre for Energy Research, HAS, Budapest, Hungary)
,
Yakimova R.
(Department of Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden)
,
Dagher R.
(CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France)
,
Dagher R.
(Universite de Nice Sophia-Antipolis, 28 Av. Valrose, 06103 Nice, France)
,
Michon A.
(CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France)
,
Cordier Y.
(CRHEA-CNRS, Rue Bernard Gregory, 06560 Valbonne, France)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
4
ページ:
ROMBUNNO.201600460
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)