文献
J-GLOBAL ID:201702285646198038
整理番号:17A0443973
水素化物半導体YH_3を用いてPd/Ni CoキャップされたY膜の低温および低H_2圧合成【Powered by NICT】
Low-temperature and low-H2 pressure synthesis of hydride semiconductor YH3- using Pd/Ni co-capped Y films
著者 (8件):
Yabuki K.
(Division of Material Science, Graduate School of Science and Engineering, Saitama University, Japan)
,
Hirama H.
(Division of Material Science, Graduate School of Science and Engineering, Saitama University, Japan)
,
Sakai M.
(Division of Material Science, Graduate School of Science and Engineering, Saitama University, Japan)
,
Saito Y.
(Division of Material Science, Graduate School of Science and Engineering, Saitama University, Japan)
,
Higuchi K.
(The Institute of Science and Industrial Research, Osaka University, Japan)
,
Kitajima A.
(The Institute of Science and Industrial Research, Osaka University, Japan)
,
Hasegawa S.
(The Institute of Science and Industrial Research, Osaka University, Japan)
,
Nakamura O.
(Faculty of Engineering, Okayama University of Science, Japan)
資料名:
Thin Solid Films
(Thin Solid Films)
巻:
624
ページ:
175-180
発行年:
2017年
JST資料番号:
B0899A
ISSN:
0040-6090
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)