文献
J-GLOBAL ID:201702285693257500
整理番号:17A1640774
高電流密度ストレス下のp-GaAsへのTi/Pt/Auオーミックコンタクトのエレクトロマイグレーション劣化機構の研究【Powered by NICT】
Investigation of Electromigration Degradation Mechanism in Ti/Pt/Au Ohmic Contacts to p-GaAs Under High Current Density Stress
著者 (12件):
Qiao Yanbin
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Zhao Dongyan
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Chen Yanning
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Shao Jin
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Zhang Haifeng
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Tang Xiaoke
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Yuan Yidong
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Li Jianqiang
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Zhao Yang
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Ma Qiang
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
,
Guo Chunsheng
(College of Microelectronics, Beijing University of Technology, Beijing, China)
,
Zhang Yamin
(State Grid Key Laboratory of Power Chip Designing and Analysis Technology, Beijing Smartchip Microelectronics Technology company, Ltd., Beijing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
11
ページ:
4581-4586
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)