文献
J-GLOBAL ID:201702285818427660
整理番号:17A1258052
ナノノードnチャネルFinFETの完全性を計測DIBL効果【Powered by NICT】
DIBL effect gauging the integrity of nano-node n-channel FinFETs
著者 (6件):
Wang Mu-Chun
(Dept. of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
,
Rao Zih-Yang
(Dept. of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
,
Liu Hao-Yi
(Dept. of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
,
Tuan Fu-Yuan
(Inst. of Mechatronic Engineering, National Taipei University of Technology, Taipei 10608, Taiwan)
,
Liao Wen-Shiang
(Dept. of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan)
,
Lan Wen-How
(Dept. of Electrical Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ISNE
ページ:
1-2
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)