文献
J-GLOBAL ID:201702285856442607
整理番号:17A0364568
TaN(001)表面上のSiドーピング2N2Ta島吸着の電荷移動と進化の第一原理研究【Powered by NICT】
First-principles study of the charge transfer and evolution of Si doping 2N2Ta islands adsorption on TaN (001) surfaces
著者 (5件):
Ren Yuan
(School of Mechanical Engineering, Inner Mongolia University of Science & Technology, Baotou, Inner Mongolia, 014010, PR China)
,
Zhang Honglv
(School of Mechanical Engineering, Inner Mongolia University of Science & Technology, Baotou, Inner Mongolia, 014010, PR China)
,
Zhang Chao
(School of Mechanical Engineering, Inner Mongolia University of Science & Technology, Baotou, Inner Mongolia, 014010, PR China)
,
Zeng Haiqing
(School of Mechanical Engineering, Inner Mongolia University of Science & Technology, Baotou, Inner Mongolia, 014010, PR China)
,
Liu Xuejie
(School of Mechanical Engineering, Inner Mongolia University of Science & Technology, Baotou, Inner Mongolia, 014010, PR China)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
392
ページ:
350-355
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)